Microchannel avalanche photodiode with wide linearity range

TL;DR

This paper introduces a novel microchannel avalanche photodiode with enhanced linearity and pixel density, utilizing a unique directly biased p-n junction for improved performance and sensitivity.

Contribution

The paper presents a new MC APD design with a directly biased p-n junction, achieving higher linearity and pixel density compared to existing devices.

Findings

Gain up to 10^5 achieved

Linearity range improved by an order of magnitude

Pixel density increased to 40000 per mm^2

Abstract

Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.