Tuning mechanical modes and influence of charge screening in nanowire resonators

TL;DR

This paper investigates the electro-mechanical properties of InAs nanowire resonators, revealing how charge screening and gate voltage influence their mechanical modes, frequency dispersion, and non-linear behavior.

Contribution

It provides a detailed experimental and theoretical analysis of charge screening effects and mode tuning in nanowire resonators, including mode mixing and hysteresis phenomena.

Findings

Non-monotonic frequency dispersion with gate voltage

Charge screening affects amplitude and mode behavior

Hysteretic non-linear response explained by Duffing model

Abstract

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with VgDC. We also experimentally probe and quantitatively explain the hysteretic non-linear properties, as a function of VgDC, of the resonator using the Duffing equation.