Origin of Drastic Change of Fermi Surface and Transport Anomalies in CeRhIn5 under Pressure

TL;DR

This paper provides a theoretical explanation for the drastic Fermi surface changes and transport anomalies in CeRhIn5 under pressure, highlighting the role of magnetic order and Ce-valence fluctuations in these phenomena.

Contribution

It introduces a theoretical model explaining the Fermi surface transition and transport anomalies in CeRhIn5, emphasizing the interplay of magnetic order and Ce-valence fluctuations.

Findings

Fermi surface changes from small to large with pressure.

Enhanced effective mass of electrons near P=Pc.

T-linear resistivity and residual resistivity peak at P=Pc.

Abstract

The mechanism of drastic change of Fermi surfaces as well as transport anomalies near P=Pc=2.35 GPa in CeRhIn5 is explained theoretically. The key mechanism is pointed out to be the interplay of magnetic order and Ce-valence fluctuations. We show that the antiferromagnetic state with "small" Fermi surfaces changes to the paramagnetic state with "large" Fermi surfaces with huge enhancement of effective mass of electrons with keeping finite c-f hybridization. This explains the drastic change of the de Haas-van Alphen signals. Furthermore, it is also consistent with the emergence of T-linear resistivity simultaneous with the residual resistivity peak at P=Pc in CeRhIn5.