Compact and explicit physical model for lateral metal-oxide-semiconductor field-effect transistor with nanoelectromechanical system based resonant gate

TL;DR

This paper introduces a simple analytical model for a lateral MOSFET with a nanoelectromechanical resonant gate, accurately matching experimental data without fitting parameters, useful for electromechanical device design.

Contribution

The paper presents a novel, explicit analytical model for NEMS-based MOSFETs that self-consistently solves coupled electromechanical equations without fitting parameters.

Findings

Model accurately predicts static and dynamic behavior.

Good agreement with experimental data.

Applicable to various electromechanical field-effect devices.

Abstract

We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities according to the mechanical oscillations are evaluated. The only input parameters are the physical characteristics of the device. No extra mathematical parameters are used to fit the experimental results. Theoretical results are in good agreement with the experimental data in static and dynamic operation. Our model is comprehensive and may be suitable for any electromechanical device based on the field-effect transduction.