Criticality of Vacancy-Induced Metal-Insulator Transition in Graphene

TL;DR

This paper investigates the critical vacancy concentration causing a metal-insulator transition in graphene, revealing unconventional localization behaviors and providing insights into recent experimental observations.

Contribution

It determines the critical vacancy concentration for MIT in graphene and analyzes the scaling laws and localization behaviors near the transition point.

Findings

Critical vacancy concentration for MIT is 0.053%.

Unconventional 2D localization behaviors are observed.

Theoretical results explain recent experiments in H-dosed graphene.

Abstract

The criticality of vacancy-induced metal-insulator transition (MIT) in graphene is investigated by Kubo-Greenwood formula with tight-binding recursion method. The critical vacancy concentration for the MIT is determined to be 0.053%. The scaling laws for transport properties near the critical point are examined showing several unconventional 2D localization behaviors. Our theoretical results have shed some new lights to the understanding of recent experiments in H-dosed graphene and of 2D disordered systems in general.