In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

TL;DR

This paper presents a CMOS-compatible in-plane nanoelectromechanical resonator using silicon nanowire piezoresistive gauges, achieving high dynamic range and signal-to-background ratio for sensitive frequency shift-based sensing.

Contribution

It introduces a novel actuation and detection scheme with outstanding performance, significantly improving detection efficiency in NEMS sensors.

Findings

Dynamic range over 100dB

Signal to background ratio of 69dB

Negligible 1/f-noise and low Johnson noise

Abstract

We report an actuation/detection scheme with a top-down nano-electromechanical system for frequency shift-based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for in-plane motion transduction. The process fabrication is fully CMOS compatible. The results show a very large dynamic range (DR) of more than 100dB and an unprecedented signal to background ratio (SBR) of 69dB providing an improvement of two orders of magnitude in the detection efficiency presented in the state of the art in NEMS field. Such a dynamic range results from both negligible 1/f-noise and very low Johnson noise compared to the thermomechanical noise. This simple low-power detection scheme paves the way for new class of robust mass resonant sensor.