A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission

TL;DR

This paper introduces a new site-controlled quantum dot system with high uniformity and narrow excitonic emission, demonstrating significant improvements in spectral purity and inhomogeneous broadening compared to existing technologies.

Contribution

The study presents a novel fabrication method for site-controlled InGaAs quantum dots with exceptionally narrow emission linewidths and high uniformity, advancing quantum dot technology.

Findings

Inhomogeneous broadening of 1.19 meV for quantum dot ensemble

Emission linewidths of 18-30 ueV for individual dots

Significant enhancement in spectral purity over previous methods

Abstract

We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 ueV) when compared to the state-of-the-art for site controlled quantum dots.