Inherent properties of binary tetrahedral semiconductors
A. S. Verma, B. K. Sarkar, V. K. Jindal

TL;DR
This paper introduces a new ionic charge theory-based approach to explain and predict the inherent properties like lattice thermal conductivity and bulk modulus of binary tetrahedral semiconductors, showing linear relationships and good agreement with experimental data.
Contribution
It presents a novel ionic charge theory method to relate and estimate thermal and elastic properties of semiconductors, improving understanding and prediction accuracy.
Findings
Lattice thermal conductivity shows a linear log relationship with nearest neighbor distance.
Conductivity data fall on two lines based on ionic charge product.
The proposed method accurately estimates bulk modulus for zinc blende semiconductors.
Abstract
A new approach utilising the concept of ionic charge theory has been used to explain the inherent properties such as lattice thermal conductivity and bulk modulus of 3,5 and 2,6 semiconductors. The lattice thermal conductivity of these semiconductors exhibit a linear relationship when plotted on a log scale against the nearest neighbour distance but fall on two straight lines according to the product of the ionic charge of the compounds. On the basis of this result a simple relationship of lattice thermal conductivity with bulk modulus is proposed and used to estimate the bulk modulus of these semiconductors. A fairly good agreement has been found between the experimantal and calculated values of these parameters for zinc blende structured solids.
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