Systematic investigation of influence of n-type doping on electron spin dephasing in CdTe

TL;DR

This study systematically explores how n-type doping levels affect electron spin coherence in bulk CdTe, revealing that optimal doping significantly prolongs spin coherence time and influences the g factor, with implications for spintronics.

Contribution

It provides the first comprehensive experimental analysis of doping-dependent electron spin coherence in CdTe, comparing results with GaAs and testing theoretical models.

Findings

Spin coherence time reaches 2.5 ns at optimal doping

Electron concentration influences g factor and coherence time

Maximum coherence time in CdTe is shorter than in GaAs

Abstract

We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17-times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs. Our data can help in cross-checking the predictions of various theoretical models that were suggested in literature as an explanation of the observed non-monotonous doping dependence of the electron spin coherence time in GaAs.