Electron transport through asymmetric ferroelectric tunnel junctions: current-voltage characteristics

TL;DR

This paper models electron tunneling in asymmetric ferroelectric junctions, revealing how interface differences cause asymmetric hysteresis in current-voltage behavior, influenced by bias voltage distribution and polarization reversal.

Contribution

It introduces a detailed calculation of I-V characteristics considering interface asymmetry and bias voltage profiles in ferroelectric tunnel junctions.

Findings

Asymmetric hysteresis observed in I-V curves.

Hysteresis asymmetry linked to bias voltage distribution.

Interface differences significantly affect tunneling behavior.

Abstract

We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces noticeably differ due to dissimilarity of the interfaces. Obtained conductance versus voltage and current versus voltage curves exhibit well distinguishable asymmetric hysteresis. We show that the asymmetry in the hysteretic effects could originate from the asymmetric bias voltage profile inside the junction. In particular, we analyze the hysteresis asymmetries occurring when the bias voltage distribution is low sensitive to the spontaneous polarization reversal.