Voltage induced control and magnetoresistance of noncollinear frustrated magnets

TL;DR

This paper explores how voltage can control the magnetic configurations and magnetoresistance in noncollinear frustrated magnets, offering a new approach for spintronic device manipulation.

Contribution

It introduces voltage induced control of noncollinear frustrated magnets as a novel method to manipulate magnetoresistance intrinsically.

Findings

Magnetic configuration depends on Fermi energy and voltage.

Voltage control can induce colossal magnetoresistance.

Bulk material control analogous to spin transfer torque.

Abstract

Noncollinear frustrated magnets are proposed as a new class of spintronic materials with high magnetoresistance which can be controlled with relatively small applied voltages. It is demonstrated that their magnetic configuration strongly depends on position of the Fermi energy and applied voltage. The voltage induced control of noncollinear frustrated materials (VCFM) can be seen as a way to intrinsic control of colossal magnetoresistance (CMR) and is the bulk material counterpart of spin transfer torque concept used to control giant magnetoresistance in layered spin-valve structures.