Probing local electronic states in the quantum Hall regime with a side coupled quantum dot

TL;DR

This paper introduces a novel technique using a side coupled quantum dot to locally probe and analyze edge states in the quantum Hall regime, revealing local electrochemical potential, electron temperature, and electrostatic potential variations.

Contribution

The study presents a new method for local edge state probing in quantum Hall systems using a side coupled quantum dot, enabling detailed spatial and electrostatic analysis.

Findings

Measured local electrochemical potential and electron temperature.

Observed spatial modulation of electrostatic potential due to screening.

Demonstrated the effectiveness of quantum dot tunneling as a probe.

Abstract

We demonstrate a new method for locally probing the edge states in the quantum Hall regime utilizing a side coupled quantum dot positioned at an edge of a Hall bar. By measuring the tunneling of electrons from the edge states into the dot, we acquire information on the local electrochemical potential and electron temperature of the edge states. Furthermore, this method allows us to observe the spatial modulation of the electrostatic potential at the edge state due to many-body screening effect.