Oxygen-vacancy-induced charge carrier in n-type interface of LaAlO3 overlayer on SrTiO3 (001): interface vs bulk doping carrier

TL;DR

This study uses density-functional-theory calculations to explore how oxygen vacancies in LaAlO3/SrTiO3 interfaces influence charge carrier distribution, interface properties, and band structure, revealing surface vacancy preference and their effects on electronic behavior.

Contribution

It provides a detailed theoretical analysis of oxygen vacancy effects at LaAlO3/SrTiO3 interfaces, highlighting vacancy preferences and their impact on charge carriers and band structure, which was not previously well understood.

Findings

Oxygen vacancies prefer to form at the LaAlO3 surface.

Surface vacancies induce a 2D carrier distribution at the interface.

Oxygen vacancies in SrTiO3 generate two electrons each, but do not screen the polar field.

Abstract

We investigated the role of oxygen vacancy in n-type interface of LaAlO3 (LAO) overlayer on SrTiO3 (STO) (001) by carrying out density-functional-theory calculations. Comparing the total energies of the configurations with one vacancy in varying locations we found that oxygen vacancies favor to appear first in LAO surface. These oxygen vacancies in the surface generate a two-dimensional distribution of carriers at the interface, resulting in band bending at the interface in STO side. Dependent on the concentration of oxygen vacancies in LAO surface, the induced carrier charge at the interface partially or completely compensates the polar electric field in LAO. Moreover, the electronic properties of oxygen vacancies in STO are also presented. Every oxygen vacancy in STO generates two electron carriers, but this carrier charge has no effect on screening polar field in LAO. Band structures at the interface dependent on the concentrations of oxygen vacancies are presented and compared with experimental results.