Ultrafast graphene photodetector

TL;DR

This paper demonstrates that graphene-based photodetectors can operate at ultrafast speeds exceeding 500 GHz, showing potential for high-frequency photonic applications due to their unique carrier dynamics and zero bias operation.

Contribution

It provides the first experimental evidence of ultrafast photocurrent response in graphene FETs up to 40 GHz and suggests intrinsic bandwidths over 500 GHz, highlighting graphene's potential in high-speed photonics.

Findings

Photocurrent response up to 40 GHz without degradation

Intrinsic bandwidth may exceed 500 GHz

Zero bias operation with high quantum efficiency

Abstract

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct interband transitions a considerable fraction of the light (~2.3%) over a very a broad wavelength range. However, while applications in electronics are vigorously being pursued, photonic applications have not attracted as much attention. Here, we report on ultrafast photocurrent response measurements in graphene (single and few-layers) field-effect-transistors (FETs) up to 40 GHz light intensity modulation frequencies, using a 1.55 micron excitation laser. No photoresponse degradation is observable up to the highest measured frequency, demonstrating the feasibility and unique benefits of using graphene in photonics. Further analysis suggests that the intrinsic bandwidth of such graphene FET based photodetectors may exceed 500 GHz. Most notably, the generation and transport of the photo-carriers in such graphene photodetectors are fundamentally different from those in currently known semiconductor photodetectors, leading to a remarkably high bandwidth, zero source-drain bias (hence zero dark current) operation, and good internal quantum efficiency.