Diffusion of Mn through GaAs barrier
J. Adell, I. Ulfat, L. Ilver, J. Sadowski, and J. Kanski
TL;DR
This study investigates how Mn diffuses through GaAs barriers in (Ga,Mn)As layers, revealing that thicker GaAs layers significantly hinder Mn out-diffusion, with no detectable Mn after 8 ML thickness.
Contribution
It provides experimental evidence on Mn diffusion behavior through GaAs barriers, highlighting the impact of barrier thickness on Mn retention in (Ga,Mn)As.
Findings
Mn diffusion is strongly reduced with increasing GaAs thickness.
No Mn detected after 8 ML GaAs barrier.
6 ML GaAs significantly impedes Mn out-diffusion.
Abstract
Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers was trapped on the surface by means of amorphous As covering the surface. It was found that the out diffusion is strongly reduced for the 6 ML GaAs film, and for the 8 ML film no Mn could be detected.
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Taxonomy
TopicsElectronic Packaging and Soldering Technologies · Electron and X-Ray Spectroscopy Techniques · Surface and Thin Film Phenomena