Tunneling conductance of graphene ferromagnet-insulator-superconductor junctions

TL;DR

This paper investigates the tunneling conductance in graphene ferromagnet-insulator-superconductor junctions, revealing how exchange interaction and bias voltage influence Andreev reflections and conductance oscillations.

Contribution

It introduces a detailed analysis of how exchange energy and bias voltage modify Andreev reflections and conductance oscillations in graphene FIS junctions, highlighting universal phase differences.

Findings

Conductance oscillates with barrier strength, modulated by exchange energy.

Spin-polarization of tunneling current can switch sign with bias voltage.

Transitions between retro and specular Andreev reflections occur at specific bias voltages.

Abstract

We study the transport properties of a graphene ferromagnet-insulator superconductor (FIS) junction within the Blonder-Tinkham-Klapwijk formalism by solving spin-polarized Dirac-Bogoliubov-de-Gennes equation. We find that the retro and specular Andreev reflections in the graphene FIS junction are drastically modified in the presence of exchange interaction and that the spin-polarization ($P_T$) of tunneling current can be tuned from the positive to negative value by bias voltage ($V$). In the thin-barrier limit, the conductance $G$ of a graphene FIS junction oscillates as a function of barrier strength $\chi$. Both the amplitude and phase of the conductance oscillation varies with the exchange energy $E_{ex}$. For $E_{ex}<E_F$ (Fermi energy), the amplitude of oscillation decreases with $E_{ex}$. For $E_{ex}^{c}>E_{ex}>E_F$, the amplitude of oscillation increases with $E_{ex}$, where $E_{ex}^{c}=2E_{F}+U_{0}$ ($U_{0}$ is the applied electrostatic potential on the superconducting segment of the junction). For $E_{ex} > E_{ex}^{c}$, the amplitude of oscillation decreases with $E_{ex}$ again. Interestingly, a universal phase difference of $\pi/2$ in $\chi$ exists between the $G-\chi$ curves for $E_{ex}>E_F$ and $E_{ex}<E_F$. Finally, we find that the transitions between retro and specular Andreev reflections occur at $eV=|E_{F}-E_{ex}|$ and $eV=E_{ex}+E_{F}$, and hence the singular behavior of the conductance near these bias voltages results from the difference in transport properties between specular and retro Andreev reflections.