Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

TL;DR

This paper provides a detailed theoretical analysis of how Fano resonance affects local tunneling conductivity near an impurity on a semiconductor surface, revealing spatial variations influenced by interference effects.

Contribution

It introduces a comprehensive theoretical model for the spatial distribution of tunneling conductivity affected by Fano resonance near impurities.

Findings

Fano resonance causes interference effects in tunneling conductivity.

Interference modifies the shape of tunneling spectra depending on distance from impurity.

Spatial distribution of conductivity varies significantly near impurity.

Abstract

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.