Interference of magnetointersubband and phonon-induced resistance oscillations in single GaAs quantum wells with two populated subbands

TL;DR

This study investigates how magnetointer-subband and phonon-induced resistance oscillations interact in GaAs quantum wells, revealing constructive interference and the effects of temperature and electron-electron scattering on oscillation amplitudes.

Contribution

It demonstrates the coexistence and interference of MIS and phonon-induced oscillations in single GaAs quantum wells with two subbands, highlighting the role of phonons in enhancing MIS oscillations.

Findings

Phonons significantly enhance MIS oscillation amplitude.

Constructive interference between phonon scattering and intersubband transitions.

Temperature damping linked to Landau level broadening from electron-electron scattering.

Abstract

Low-temperature electron magnetotransport in single GaAs quantum wells with two populated subbands is studied at large filling factors. Magneto-inter-subband (MIS) and acoustic-phonon induced oscillations of the dissipative resistance are found to be coexisting but interfering substantially with each other. The experiments show that amplitude of the MIS-oscillations enhances significantly by phonons, indicating "constructive interference" between the phonon scattering and the intersubband electron transitions. Temperature damping of the quantum oscillations is found to be related to broadening of Landau levels caused by considerable electron-electron scattering.