# A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

## TL;DR

This paper demonstrates that thermal annealing of epitaxial SrTiO3 thin films significantly improves their transistor performance, achieving characteristics comparable to bulk single crystals, which is promising for oxide electronics.

## Contribution

It introduces a method to fabricate high-performance SrTiO3 thin-film transistors using single-crystalline epitaxial films with thermal annealing.

## Key findings

- Annealed epitaxial SrTiO3 TFTs show high on/off ratio (>10^5).
- Sub-threshold swing is approximately 2.1 V/decade.
- Field-effect mobility is around 0.8 cm^2/Vs.

## Abstract

We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

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Source: https://tomesphere.com/paper/0912.4341