Dual Gate Graphene FETs with fT of 50 GHz

TL;DR

This paper reports a dual-gate graphene FET achieving a record cutoff frequency of 50 GHz, surpassing silicon MOSFETs at the same gate length, demonstrating graphene's potential for high-frequency RF applications.

Contribution

It introduces a dual-gate graphene FET with electrostatic doping to reduce access resistance, achieving the highest fT reported for graphene transistors to date.

Findings

Achieved a cutoff frequency of 50 GHz in a 350-nm gate device

Demonstrated higher fT than silicon MOSFETs at the same gate length

Showed improved RF performance through electrostatic doping

Abstract

A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is demonstrated in a 350-nm gate length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOSFETs at the same gate length, illustrating the potential of graphene for RF applications.