Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers

TL;DR

This paper demonstrates control over quantum levels and spin-dependent tunneling in a III-V ferromagnetic heterostructure with a GaMnAs quantum well, paving the way for advanced spintronic devices.

Contribution

It introduces a novel three-terminal ferromagnetic heterostructure with tunable quantum levels and spin-dependent current control.

Findings

Successful modulation of spin-dependent current via electrode voltage

Control of quantum levels in a GaMnAs quantum well

Potential for three-terminal spin resonant-tunneling devices

Abstract

We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels and modulate the spin-dependent current with varying the voltage of the electrode connected to the GaMnAs QW. Our results will open up a new possibility for realizing three-terminal spin resonant-tunneling devices.