GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier
Shinobu Ohya, Iriya Muneta, Pham Nam Hai, and Masaaki Tanaka
TL;DR
This paper reports on GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier, achieving high tunneling magnetoresistance ratios due to high crystal quality and suppressed tunneling at specific wave vectors.
Contribution
The study introduces AlMnAs as a barrier material in GaMnAs-based MTJs, demonstrating superior TMR performance compared to other barriers.
Findings
TMR ratios up to 175% at 2.6 K
Estimated barrier height of 110 meV for AlMnAs
High crystal quality of AlMnAs enhances TMR
Abstract
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is estimated to be 110 meV. We observe tunneling magnetoresistance (TMR) ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-based MTJs with other barrier materials in the same temperature region. These high TMR ratios can be mainly attributed to the relatively high crystal quality of AlMnAs and the suppression of the tunneling probability near at the in-plane wave-vector k||=0.
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