The calculus of the electric potential and field intensity in multiple electrodes lateral tunneling transistors with double gate

TL;DR

This paper introduces an adaptive over-relaxation method to accurately and efficiently compute electric potential and field intensity in complex multi-electrode tunnel transistors with double gates, aiding device analysis.

Contribution

The paper develops a novel adaptive over-relaxation technique tailored for complex split-gate tunnel transistors, improving calculation speed and accuracy.

Findings

Method achieves high accuracy in potential and field calculations.

Numerical tests confirm the method's efficiency and reliability.

Potential distribution enables precise tunneling current analysis.

Abstract

The paper presents an adaptive over-relaxation method for calculating the electric potential and field intensity, for a complex tunnel transistor structure involving a split gate and a shielding boundary. The accuracy and speed of the method has been numerically tested and found satisfactory for the study of such devices by calculating the tunneling currents for the obtained potential distribution.