Fully Overheated Single-Electron Transistor

TL;DR

This paper investigates a fully overheated single-electron transistor, revealing three transport regimes and an unusual sensitivity to temperature fluctuations that leads to a large Fano factor in current noise.

Contribution

It introduces a comprehensive analysis of heat balance and transport regimes in overheated single-electron transistors, highlighting novel noise behavior at regime crossover.

Findings

Identifies three distinct transport regimes: cotunneling, single-electron tunneling, and their competition.

Discovers an anomalous sensitivity to temperature fluctuations at the crossover point.

Reports an exceptionally large Fano factor of current noise at the regime boundary.

Abstract

We consider the fully overheated single-electron transistor, where the heat balance is determined entirely by electron transfers. We find three distinct transport regimes corresponding to cotunneling, single-electron tunneling, and a competition between the two. We find an anomalous sensitivity to temperature fluctuations at the crossover between the two latter regimes that manifests in an exceptionally large Fano factor of current noise.