Systematic Control of Carrier Doping without Disorder at Interface of Oxide Heterostructures

TL;DR

This paper introduces a disorder-free method to precisely control carrier densities at oxide heterostructure interfaces by inserting non-polar layers, enabling systematic tuning up to high carrier concentrations.

Contribution

The authors propose a novel approach to control carrier doping without disorder, using non-polar layer insertion in oxide heterostructures.

Findings

Carrier densities can be systematically tuned up to high values.

The method avoids disorder typically introduced by doping.

Continuous control of carrier densities is achieved.

Abstract

We propose a method to systematically control carrier densities at the interface of transition-metal oxide heterostructures without introducing disorders. By inserting non-polar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control the total carrier densities per unit cell systematically up to high values of the order unity.