Influence of ion implantation on the magnetic and transport properties of manganite films
M. Sirena, A. Zimmers, N. Haberkorn, E. Kaul, L. B. Steren, J., Lesueur, T. Wolf, Y. Le Gall, J.-J. Grob, G. Faini

TL;DR
This study investigates how oxygen ion irradiation-induced disorder affects the magnetic and transport properties of manganite films, revealing a decoupling of magnetic and metal-insulator transitions and the role of inhomogeneity.
Contribution
It introduces controlled structural disorder via oxygen ion irradiation and analyzes its effects on manganite films' properties, highlighting a decoupling of magnetic and electronic transitions.
Findings
Disorder increases localization of carriers.
No low field magnetoresistance observed despite inhomogeneity.
Magnetization decreases without changing transition temperature.
Abstract
We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field.…
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