Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films

TL;DR

This paper reports a method for depositing highly uniform chemically derived graphene films on 300 mm wafers, enabling their use in transparent, conductive electronic devices with high mobility and controllable thickness.

Contribution

It introduces a scalable process for uniform graphene film deposition on large wafers, with detailed characterization and high-performance electronic properties.

Findings

Achieved uniform graphene films on 300 mm wafers

Films exhibit high transparency and electrical activity

FET devices show high mobility (~15 cm2/Vs)

Abstract

The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy (AFM) height profiles reveal that the film thickness is very uniform and highly controllable, ranging from 1-2 layers up to 30 layers. After reduction using a variety of methods, the CDG films are transparent and electrically active with FET devices yielding exceptionally high mobilities of ~ 15 cm2/Vs and sheet resistance of ~ 1 k Ohm/sq at ~ 70 % transparency.