Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

TL;DR

This paper reports on the fabrication and systematic analysis of high-performance Ge-SixGe1-x core-shell nanowire FETs, highlighting their scaling behavior, device parameters, and switching performance.

Contribution

It introduces a method for fabricating doped source/drain regions in nanowire FETs and provides a comprehensive analysis of their scaling properties and performance metrics.

Findings

Low contact resistance achieved through boron implantation

Extracted key device parameters including mobility and resistance

Demonstrated high switching speed and ON/OFF ratio

Abstract

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.