The problem of "macroscopic charge quantization" in single-electron devices
I.S. Burmistrov, A.M.M. Pruisken

TL;DR
This paper investigates macroscopic charge quantization in single-electron devices, revealing deep connections to quantum Hall effects and introducing a comprehensive response theory to understand their behavior across different coupling regimes.
Contribution
It develops a new response theory for SETs based on AES theory, linking charge quantization to topological features and the quantum Hall effect, and analyzes behavior from weak to strong coupling regimes.
Findings
Charge quantization in SETs is analogous to quantum Hall effect.
A unifying scaling diagram of SET behavior is established.
Topological features of the theta-angle are identified in SETs.
Abstract
In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is completely analogous to the quantum Hall effect observed on very different electron systems. In this investigation we present more detail on these new findings. Based on the Ambegaokar-Eckern-Schoen (AES) theory of the Coulomb blockade we introduce a general response theory that probes the sensitivity of SET to changes in the boundary conditions. This response theory defines a new set of physical observables and we establish the contact with the standard results obtained from ordinary linear response theory. The response parameters generally define the renormalization behavior of the SET in the entire regime from weak coupling with large values of the…
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