A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

TL;DR

This paper introduces a pseudo-spin-MOSFET that integrates a magnetic tunnel junction with a conventional MOSFET, demonstrating spin-transistor functionalities at room temperature for the first time.

Contribution

It presents the development and fabrication of a novel spin-functional MOSFET using MTJ technology, enabling spin control in standard MOSFET devices.

Findings

High and low transconductance controlled by MTJ magnetization states

Successful device integration on SOI substrates

First demonstration of spin-transistor operation in a MOSFET-like device

Abstract

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductance controlled by the magnetization configurations of the MTJ at room temperature. This is the first observation of spin-transistor operations for spin-functional MOSFETs.