Real-Time Observation of Reactive Spreading of Gold on Silicon
Nicola Ferralis, Farid El Gabaly, Andreas K. Schmid, Roya Maboudian,, Carlo Carraro

TL;DR
This study uses real-time electron microscopy to observe how gold spreads on silicon, revealing that the process is controlled by silicide formation and interface reconstruction, with spreading velocities varying significantly with temperature.
Contribution
It provides the first real-time imaging of gold spreading on silicon and links the spreading rate to silicide formation and interface reconstruction mechanisms.
Findings
Spreading radius depends linearly on time.
Spreading velocities range from below 100 pm/s to 50 nm/s.
Spreading is limited by Au silicide formation.
Abstract
The spreading of a bilayer gold film propagating outward from gold clusters, which are pinned to clean Si(111), is imaged in real time by low energy electron microscopy. By monitoring the evolution of the boundary of the gold film at fixed temperature, a linear dependence of the spreading radius on time is found. The measured spreading velocities in the temperature range of 800 < T < 930 K varied from below 100 pm/s to 50 nm/s. We show that the spreading rate is limited by the reaction to form Au silicide, and the spreading velocity is likely regulated by the reconstruction of the gold silicide that occurs at the interface.
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