Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)
N.V. Agrinskaya, V.I. Kozub
TL;DR
This paper critiques prior work on weak localization in GaMnAs, proposing that observed negative magnetoresistance may instead be due to superconducting transitions in the leads, challenging the original interpretation.
Contribution
It offers an alternative explanation for negative magnetoresistance in GaMnAs, emphasizing the role of superconducting leads rather than impurity band transport.
Findings
Negative magnetoresistance may be caused by superconducting transitions in leads.
Original interpretation of impurity band transport is questioned.
Superconducting transition temperature of In leads is relevant to observed effects.
Abstract
We suggest that negative magnetoresistance in small magnetic fields at temperatures lower than 3 K reported in the paper under discussion may be related to superconducting transition in In leads (with Tc = 3.4 K).
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Terahertz technology and applications