Terahertz and Infrared Photodetection using p-i-n Multiple-Graphene-Layer Structures

TL;DR

This paper proposes a novel graphene-based p-i-n multilayer structure for efficient, fast terahertz and infrared photodetectors, demonstrating high responsivity and detectivity at room temperature with potential for high-frequency operation.

Contribution

Introduction of a multiple-graphene-layer p-i-n structure for enhanced THz and IR detection, with detailed modeling showing superior responsivity and speed capabilities.

Findings

High dc responsivity and detectivity at room temperature.

Fast operation with modulation frequencies up to tens of GHz.

Potential to outperform existing THz and IR detectors.

Abstract

We propose to utilize multiple-graphene-layer structures with lateral p-i-n junctions for terahertz (THz) and infrared (IR) photodetection and substantiate the operation of photodetectors based on these structures. Using the developed device model, we calculate the detector dc responsivity and detectivity as functions of the number of graphene layers and geometrical parameters and show that the dc responsivity and detectivity can be fairly large, particularly, at the lower end of the THz range at room temperatures. Due to relatively high quantum efficiency and low thermogeneration rate, the photodetectors under consideration can substantially surpass other THz and IR detectors. Calculations of the detector responsivity as a function of modulation frequency of THz and IR radiation demonstrate that the proposed photodetectors are very fast and can operate at the modulation frequency of several tens of GHz.