Controlled defects in ZnO by low energy Ar irradiation

TL;DR

This study investigates how low energy Ar ion irradiation creates controlled defects in ZnO, affecting its optical, structural, and electrical properties, with potential implications for optoelectronic applications.

Contribution

It provides new insights into defect engineering in ZnO using low energy Ar irradiation, including color change, defect formation, and significant resistivity reduction.

Findings

Color change correlates with oxygen vacancy defects.

Surface roughness increases with higher fluence.

Resistivity decreases by four orders of magnitude after irradiation.

Abstract

We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the initial fluence 1 X 10^15 ions/cm^2 changes the colour of the sample from white to orange while the highest irradiation fluence makes it dark reddish brown that appears as black. Such changes in colour can be correlated with the oxygen vacancy type defects. No significant change in the grain size of the irradiated samples, as revealed from the x-ray diffraction (XRD) line width broadening, has been observed. Increase of surface roughness due to sputtering is clearly visible in scanning electron micrographs (SEM) with highest fluence of irradiation. Room temperature Photoluminescence (PL) spectrum of the unirradiated sample shows intense ultra-violet (UV) emission (~ 3.27 eV) and less prominent defect level emissions (2-3 eV). The overall emission is largely quenched due to initial irradiation fluence. But with increasing fluence UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This indicates increase of donor concentration as well as their mobility due to irradiation. Oxygen vacancies are deep donors in ZnO, but surely they influence the stability of the shallow donors (presumably zinc interstitial related) and vice versa. This is in conformity with recent theoretical calculations.