Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

TL;DR

This paper demonstrates that using an organic polymer buffer layer in graphene transistors preserves high carrier mobility, enabling improved high-frequency performance without significant mobility degradation.

Contribution

Introduction of a buffered dielectric stack that maintains high field-effect mobility in graphene transistors, enhancing their high-frequency capabilities.

Findings

High field-effect mobilities are retained with the buffer layer.

Mobility degradation is minimized compared to traditional dielectrics.

Phonons are identified as the main scattering mechanism.

Abstract

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis, and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.