Radiative recombination through EL2 centers in gallium arsenide single crystals doped by selenium and cadmium
M.B. Litvinova, S.V. Shutov, A.D. Shtan'ko, V.V. Kurak
TL;DR
This study investigates how selenium and cadmium dopants affect photon emission efficiency through EL2 centers in gallium arsenide crystals, highlighting the role of vacancy structures and impurity complexes.
Contribution
It provides new insights into the influence of specific dopants and vacancy structures on EL2-related photon emission in gallium arsenide.
Findings
Dopants alter quantum efficiency of photon emission.
Vacancy structures and impurity complexes are key factors.
Diffusion techniques reveal changes in emission properties.
Abstract
Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. The change character and extent of the photon emission quantum efficiency have been established to be defined by vacancy structure of crystal that is most likely caused by formation of EL2-dopant complexes.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Silicon Nanostructures and Photoluminescence