Electron transport in a double quantum ring: Evidence of an AND gate

TL;DR

This paper demonstrates how a double quantum ring system can function as an AND logic gate by controlling electron transport with magnetic flux and gate voltages, showing potential for quantum-based electronic logic devices.

Contribution

The study introduces a double quantum ring setup that exhibits AND gate behavior through magnetic flux and gate voltages, analyzed via Green's function formalism.

Findings

High output current occurs only when both inputs are high at specific magnetic flux.

System effectively mimics AND gate logic in electron transport.

Conductance and current-voltage characteristics depend on flux and gate voltages.

Abstract

We explore AND gate response in a double quantum ring where each ring is threaded by a magnetic flux $\phi$. The double quantum ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely, $V_a$ and $V_b$, are applied, respectively, in the lower arms of the two rings which are treated as two inputs of the AND gate. The system is described in the tight-binding framework and the calculations are done using the Green's function formalism. Here we numerically compute the conductance-energy and current-voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our study suggests that, for a typical value of the magnetic flux $\phi=\phi_0/2$ ($\phi_0=ch/e$, the elementary flux-quantum) a high output current (1) (in the logical sense) appears only if both the two inputs to the gate are high (1), while if neither or only one input to the gate is high (1), a low output current (0) results. It clearly demonstrates the AND gate behavior and this aspect may be utilized in designing an electronic logic gate.