Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

TL;DR

This paper demonstrates the fabrication of low-voltage, hysteresis-free organic transistors and inverters with high stability, using an ultra-thin fluoropolymer dielectric that creates an almost trap-free interface, enabling simple processing techniques.

Contribution

The study introduces a straightforward method to produce stable, low-voltage organic transistors with an ultra-thin fluoropolymer dielectric, achieving excellent electrical performance and stability.

Findings

Transistors operate at voltages below 2 V.

Achieved very low threshold voltage of 0.2 V.

Demonstrated high stability against gate bias stress.

Abstract

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and excellent stability against gate bias stress. It is gratifying to notice that such small OFET operating voltages can be achieved with the relatively simple processing techniques employed in this study.