Dissipative current in SIFS Josephson junctions
A.S. Vasenko, S. Kawabata, A.A. Golubov, M.Yu. Kupriyanov, F.W.J., Hekking
TL;DR
This paper studies the dissipative current in SIFS Josephson junctions by calculating the density of states and current-voltage characteristics using quasiclassical theory, providing insights into their behavior in the dirty limit.
Contribution
It presents a self-consistent numerical analysis of the density of states and current-voltage characteristics in SIFS junctions, extending understanding beyond existing analytical approximations.
Findings
Quantitative DOS calculations for arbitrary ferromagnetic layer length.
Comparison of numerical results with analytical DOS approximation.
Detailed current-voltage characteristics of SIFS junctions.
Abstract
We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We consider the case of a strong tunnel barrier such that the left S layer and the right FS bilayer are decoupled. We calculate quantitatively the density of states (DOS) in the FS bilayer for arbitrary length of the ferromagnetic layer, using a self-consistent numerical method. We compare these results with a known analytical DOS approximation, which is valid when the ferromagnetic layer is long enough. Finally we calculate quantitatively the current-voltage characteristics of a SIFS junction.
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