Dynamics of the hysteretic voltage-induced torsional strain in tantalum trisulfide

TL;DR

This study investigates how voltage waveforms and frequency affect the hysteretic torsional strain in tantalum trisulfide, revealing complex, sample-dependent dynamics linked to charge-density-wave interactions and defect effects.

Contribution

It provides detailed measurements of the frequency and waveform dependence of voltage-induced torsional strain, highlighting the complex, sample-dependent relaxation behavior in tantalum trisulfide.

Findings

Hysteresis loops broaden at periods less than 30 seconds.

Square-wave responses differ for positive and negative voltages.

Multiple relaxation times decrease with increasing voltage.

Abstract

We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 seconds. The square-wave response shows that the dynamic response to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects.