# Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

## TL;DR

This paper demonstrates that renormalization group theory accurately describes the metallic phase in Si-MOSFETs at very low temperatures when valley splitting and intervalley scattering are considered.

## Contribution

It extends the scaling theory to include valley effects, providing a comprehensive understanding of metallic behavior in silicon-based transistors.

## Key findings

- Renormalization group theory aligns with experimental data when valley effects are included.
- Valley splitting and intervalley scattering are crucial for accurate low-temperature modeling.
- The metallic phase persists down to the lowest temperatures studied.

## Abstract

We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures.