Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

TL;DR

This paper demonstrates that renormalization group theory accurately describes the metallic phase in Si-MOSFETs at very low temperatures when valley splitting and intervalley scattering are considered.

Contribution

It extends the scaling theory to include valley effects, providing a comprehensive understanding of metallic behavior in silicon-based transistors.

Findings

Renormalization group theory aligns with experimental data when valley effects are included.

Valley splitting and intervalley scattering are crucial for accurate low-temperature modeling.

The metallic phase persists down to the lowest temperatures studied.

Abstract

We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures.