Fabrication and characterization of pseudo-spin-MOSFET

TL;DR

This paper introduces a pseudo-spin-MOSFET architecture that combines an ordinary MOSFET with a magnetic tunnel junction to emulate spin transistor functions, addressing challenges in spin injection and detection.

Contribution

The paper presents a novel circuit approach using standard MOSFETs and MTJs to replicate spin transistor behavior, bypassing interface-related issues.

Findings

Demonstration of pseudo-spin-MOSFET architecture

Potential for improved spintronic device integration

Addresses ferromagnet/semiconductor interface challenges

Abstract

Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circuit approach using an ordinary MOSFET and magnetic tunnel junction (MTJ) to reproduce the functions of spin transistors.