Backaction of a charge detector on a double quantum dot
Shi-Hua Ouyang, Chi-Hang Lam, and J. Q. You

TL;DR
This paper develops a master equation model to analyze how a quantum point contact influences a double quantum dot, explaining electron transport thresholds and proposing a scheme for pure spin current generation without charge flow.
Contribution
It introduces a novel theoretical approach to study QPC backaction on DQDs and proposes a new method for pure spin current generation.
Findings
Electrons pass through the DQD only when QPC bias exceeds a threshold.
The excitation condition matches experimental observations.
A scheme for pure spin current generation without charge current is proposed.
Abstract
We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exceeds a threshold value determined by the eigenstate energy difference of the DQD. This derived excitation condition agrees well with experiments on QPC-induced inelastic electron tunneling through a DQD [S. Gustavsson et al., Phys. Rev. Lett. 99, 206804(2007)]. Moreover, we propose a new scheme to generate a pure spin current by the QPC in the absence of a charge current.
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