Wafer-scale synthesis and transfer of graphene films

TL;DR

This paper presents a method for wafer-scale synthesis and transfer of high-quality graphene films, enabling large-area applications in electronics and optoelectronics with demonstrated high-performance devices.

Contribution

It introduces a novel process for producing and transferring wafer-scale graphene films, facilitating scalable device fabrication and diverse applications.

Findings

Graphene films up to 3-inch wafer size produced on Ni and Cu.

High-performance FETs with mobilities of 1,100 and 550 cm²/Vs.

Stretchable strain gauges with a gauge factor of ~6.1.

Abstract

We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.