Substrate Modulated Graphene Quantum Dot

TL;DR

This paper introduces a novel method to create graphene quantum dots using substrate-induced gaps and ferromagnetic insulators, offering a practical alternative to etched quantum dots with spin-dependent properties.

Contribution

It presents a new substrate-based approach to confine electrons in graphene, utilizing ferromagnetic insulators to induce spin-related effects, simplifying fabrication compared to traditional etching methods.

Findings

Effective electron confinement in gapless graphene using gapped substrate.

Spin-dependent energy spectrum and transport properties demonstrated.

Potential for practical quantum dot applications in graphene devices.

Abstract

We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated $SiO_{2}$ substrate partly H-passivated. In particular, we use ferromagnetic insulators deposited on top of barrier which give rise to a spin related energy spectrum and transport properties. Compared to the complexity of etched quantum dots in graphene, the setup suggested here is a promising candidate for practical applications.