Distribution of conductance for Anderson Insulators: A theory with a single parameter
Andrew Douglas, K.A. Muttalib

TL;DR
This paper derives an analytic distribution of conductance in 3D Anderson insulators, revealing non-trivial behavior near the metal-insulator transition and proposing a single-parameter description.
Contribution
It provides a novel analytic expression for conductance distribution in disordered conductors, emphasizing a single-parameter framework for the Anderson transition.
Findings
Distribution deviates from log-normal even in deep insulators
Variance scales as a fractional power of the mean conductance
Skewness changes sign near the transition
Abstract
We obtain an analytic expression for the full distribution of conductance for a strongly disordered three dimensional conductor within a perturbative approach based on the transfer-matrix formulation. Our results confirm numerical evidence that the log-normal limit of the distribution is not reached even in the deeply insulating regime. We show that the variance of the logarithm of the conductance scales as a fractional power of the mean, while the skewness changes sign as one approaches the Anderson metal-insulator transition from the deeply insulating limit, all described as a function of a single parameter. The approach suggests a possible single parameter description of the Anderson transition that takes into account the full nontrivial distribution of conductance.
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Taxonomy
TopicsSurface and Thin Film Phenomena · Advancements in Semiconductor Devices and Circuit Design · Electron and X-Ray Spectroscopy Techniques
