Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization

TL;DR

This study investigates the electronic properties of large-scale CVD graphene on copper, demonstrating quantum Hall effect and weak localization, which reveal intrinsic monolayer graphene behavior and carrier scattering mechanisms.

Contribution

It provides detailed transport measurements of wafer-scale CVD graphene, including quantum Hall effect and weak localization, highlighting its potential for electronic applications.

Findings

Observation of half-integer quantum Hall effect in CVD graphene

Detection of weak localization indicating phase coherence

Carrier mobilities up to 3000 cm^2/Vs

Abstract

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphene. We also observe weak localization and extract information about phase coherence and scattering of carriers.