Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

TL;DR

This study investigates the magnetic memory effects of Mn5Ge3 nanomagnets embedded in a Mn-diluted Ge matrix, revealing spin-glass-like behavior due to nanomagnet size distribution rather than inter-particle interactions.

Contribution

It demonstrates that the observed magnetic memory effects are caused by nanomagnet size distribution, not inter-particle interactions, providing new insights into nanomagnet behavior in diluted matrices.

Findings

Temperature-dependent memory effect observed below superparamagnetic blocking temperature.

Slow magnetic relaxation characteristic of spin-glass-like features.

Memory effects are attributed to nanomagnet size distribution, not inter-particle interactions.

Abstract

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.