Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light

TL;DR

This paper presents an improved, experimentally validated model for semiconductor optical amplifiers that accurately predicts RF behavior and slow light effects across various conditions, emphasizing dynamic saturation and carrier density roles.

Contribution

The authors introduce a simple, material-based model for SOA dynamic saturation that is independent of optical intensity and current, validated by experimental data.

Findings

Model accurately predicts RF behavior and slow light effects.

Good agreement with experiments for various modulation indices.

Model relies solely on material fitting parameters.

Abstract

We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.